DocumentCode
2660696
Title
Intrinsic Limitations of p-doped and Undoped 1.3 μm InAs/GaAs Quantum Dot Lasers
Author
Massé, N.F. ; Sweeney, S.J. ; Marko, I.P. ; Andreev, A.D. ; Adams, A.R. ; Hatori, N. ; Sugawara, M.
Author_Institution
Sch. of Electron. & Phys. Sci., Surrey Univ., Guildford
fYear
0
fDate
0-0 0
Firstpage
143
Lastpage
144
Abstract
The temperature dependencies of the recombination and gain processes reveal intrinsic limitations on the performances of quantum dot lasers. Controlling the transport of the carriers using the inhomogeneous broadening makes temperature stable threshold current possible
Keywords
Auger effect; III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; laser beams; quantum dot lasers; thermal stability; transport processes; 1.3 micron; Auger recombination mechanisms; InAs-GaAs; carrier transport control; gain processes; inhomogeneous broadening; intrinsic limitations; p-doped lasers; quantum dot lasers; temperature dependencies; undoped lasers; Current measurement; Gain measurement; Gallium arsenide; Quantum dot lasers; Radiative recombination; Spontaneous emission; Temperature dependence; Temperature sensors; Threshold current; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location
Kohala Coast, HI
Print_ISBN
0-7803-9560-3
Type
conf
DOI
10.1109/ISLC.2006.1708127
Filename
1708127
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