Title :
Intrinsic Limitations of p-doped and Undoped 1.3 μm InAs/GaAs Quantum Dot Lasers
Author :
Massé, N.F. ; Sweeney, S.J. ; Marko, I.P. ; Andreev, A.D. ; Adams, A.R. ; Hatori, N. ; Sugawara, M.
Author_Institution :
Sch. of Electron. & Phys. Sci., Surrey Univ., Guildford
Abstract :
The temperature dependencies of the recombination and gain processes reveal intrinsic limitations on the performances of quantum dot lasers. Controlling the transport of the carriers using the inhomogeneous broadening makes temperature stable threshold current possible
Keywords :
Auger effect; III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; laser beams; quantum dot lasers; thermal stability; transport processes; 1.3 micron; Auger recombination mechanisms; InAs-GaAs; carrier transport control; gain processes; inhomogeneous broadening; intrinsic limitations; p-doped lasers; quantum dot lasers; temperature dependencies; undoped lasers; Current measurement; Gain measurement; Gallium arsenide; Quantum dot lasers; Radiative recombination; Spontaneous emission; Temperature dependence; Temperature sensors; Threshold current; US Department of Transportation;
Conference_Titel :
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location :
Kohala Coast, HI
Print_ISBN :
0-7803-9560-3
DOI :
10.1109/ISLC.2006.1708127
