• DocumentCode
    2660701
  • Title

    VL-CDRAM: variable line sized cached DRAMs

  • Author

    Hegde, Ananth ; Vijaykrishnan, N. ; Kandemir, Mahmut ; Irwin, Mary Jane

  • Author_Institution
    Micro Syst. Design Lab., Pennsylvania State Univ., University Park, PA, USA
  • fYear
    2003
  • fDate
    1-3 Oct. 2003
  • Firstpage
    132
  • Lastpage
    137
  • Abstract
    Many of the current memory architectures embed a SRAM cache within the DRAM memory. These architectures exploit a wide internal data bus to transfer an entire DRAM row to the on-memory cache. However, applications exhibit a varying spatial locality across the different DRAM rows that are accessed and buffering the entire row may be wasteful. In order to adapt to the changing spatial locality, we propose a variable line size cached DRAM (VL-CDRAM) that can buffer portions of an accessed DRAM row. Our evaluation shows that the proposed approach is effective in not only reducing the energy consumption but also in improving the performance across various memory configurations.
  • Keywords
    DRAM chips; cache storage; memory architecture; memory protocols; DRAM memory; VL-CDRAM; energy consumption; internal data bus; memory architecture; on-memory cache; variable line sized cached DRAM; Bandwidth; Delay; Energy consumption; Memory architecture; Permission; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Hardware/Software Codesign and System Synthesis, 2003. First IEEE/ACM/IFIP International Conference on
  • Conference_Location
    Newport Beach, CA, USA
  • Print_ISBN
    1-58113-742-7
  • Type

    conf

  • DOI
    10.1109/CODESS.2003.1275272
  • Filename
    1275272