DocumentCode :
2660701
Title :
VL-CDRAM: variable line sized cached DRAMs
Author :
Hegde, Ananth ; Vijaykrishnan, N. ; Kandemir, Mahmut ; Irwin, Mary Jane
Author_Institution :
Micro Syst. Design Lab., Pennsylvania State Univ., University Park, PA, USA
fYear :
2003
fDate :
1-3 Oct. 2003
Firstpage :
132
Lastpage :
137
Abstract :
Many of the current memory architectures embed a SRAM cache within the DRAM memory. These architectures exploit a wide internal data bus to transfer an entire DRAM row to the on-memory cache. However, applications exhibit a varying spatial locality across the different DRAM rows that are accessed and buffering the entire row may be wasteful. In order to adapt to the changing spatial locality, we propose a variable line size cached DRAM (VL-CDRAM) that can buffer portions of an accessed DRAM row. Our evaluation shows that the proposed approach is effective in not only reducing the energy consumption but also in improving the performance across various memory configurations.
Keywords :
DRAM chips; cache storage; memory architecture; memory protocols; DRAM memory; VL-CDRAM; energy consumption; internal data bus; memory architecture; on-memory cache; variable line sized cached DRAM; Bandwidth; Delay; Energy consumption; Memory architecture; Permission; Random access memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Hardware/Software Codesign and System Synthesis, 2003. First IEEE/ACM/IFIP International Conference on
Conference_Location :
Newport Beach, CA, USA
Print_ISBN :
1-58113-742-7
Type :
conf
DOI :
10.1109/CODESS.2003.1275272
Filename :
1275272
Link To Document :
بازگشت