Title :
Atomic scale defects in 4H SiC/SiO2 using electron spin resonance
Author :
Rape, Aaron ; Lenahan, P.M. ; Lelis, A.J.
Author_Institution :
Pennsylvania State Univ., University Park
Abstract :
In this study we report on ESR results on silicon carbide blanket wafers. The samples studied had p-type 4H-SiC substrates with a resistivity of 1000 ohm-cm. The SiC wafers had a 5mum epitaxially grown surface layer which was doped with Al to 5e15 cm-3. The oxide (about 500Aring thick) was grown using Cree´s standard dry-wet process with a NO post-oxidation anneal.
Keywords :
aluminium; crystal defects; epitaxial growth; nitrogen compounds; paramagnetic resonance; silicon compounds; wide band gap semiconductors; Al; ESR; NO post-oxidation anneal; SiC; SiC wafers; SiO2; atomic scale defects; dry-wet process; electron spin resonance; epitaxially grown surface layer; p-type 4H-SiC substrates; silicon carbide blanket wafers; Art; Educational institutions; Electron traps; Magnetic fields; Magnetic resonance; Metal-insulator structures; Paramagnetic materials; Paramagnetic resonance; Physics; Silicon carbide;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422484
