• DocumentCode
    2660713
  • Title

    Atomic scale defects in 4H SiC/SiO2 using electron spin resonance

  • Author

    Rape, Aaron ; Lenahan, P.M. ; Lelis, A.J.

  • Author_Institution
    Pennsylvania State Univ., University Park
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this study we report on ESR results on silicon carbide blanket wafers. The samples studied had p-type 4H-SiC substrates with a resistivity of 1000 ohm-cm. The SiC wafers had a 5mum epitaxially grown surface layer which was doped with Al to 5e15 cm-3. The oxide (about 500Aring thick) was grown using Cree´s standard dry-wet process with a NO post-oxidation anneal.
  • Keywords
    aluminium; crystal defects; epitaxial growth; nitrogen compounds; paramagnetic resonance; silicon compounds; wide band gap semiconductors; Al; ESR; NO post-oxidation anneal; SiC; SiC wafers; SiO2; atomic scale defects; dry-wet process; electron spin resonance; epitaxially grown surface layer; p-type 4H-SiC substrates; silicon carbide blanket wafers; Art; Educational institutions; Electron traps; Magnetic fields; Magnetic resonance; Metal-insulator structures; Paramagnetic materials; Paramagnetic resonance; Physics; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422484
  • Filename
    4422484
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2660713