Nonlinear Optical Effects in InxGa(1-x)As Quantum Systems for Saturable Absorbers

Author

Aldaz, R.I. ; Wiemer, M.W. ; Miller, D.A.B. ; Harris, J.S., Jr.

Author_Institution

Solid State & Photonics Lab, Stanford Univ., CA

fYear

0

fDate

0-0 0

Firstpage

149

Lastpage

150

Abstract

In this study we present measurements of the intrinsic properties of three quantum systems: bound and excitonic QWs states, and QDs. We start by measuring the external properties of two saturable absorbers, one with QWs and the other with QDs. By fitting this measured external data, we then calculate the intrinsic properties of each of the three quantum systems and compare their merits as saturable absorbing materials

Keywords

III-V semiconductors; bound states; excitons; gallium arsenide; indium compounds; laser mode locking; optical saturable absorption; semiconductor lasers; semiconductor quantum dots; semiconductor quantum wells; In_xGa_1-xAs; QD state; bound state; excitonic QW states; external properties; intrinsic properties; mode-locked laser; nonlinear optical effects; quantum systems; saturable absorbers; semiconductor external cavity laser; Absorption; Fiber lasers; Laser mode locking; Nonlinear optics; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Solid lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International

Conference_Location

Kohala Coast, HI

Print_ISBN

0-7803-9560-3

Type

conf

DOI

10.1109/ISLC.2006.1708130

Filename

1708130