DocumentCode :
2660733
Title :
Nonlinear Optical Effects in InxGa(1-x)As Quantum Systems for Saturable Absorbers
Author :
Aldaz, R.I. ; Wiemer, M.W. ; Miller, D.A.B. ; Harris, J.S., Jr.
Author_Institution :
Solid State & Photonics Lab, Stanford Univ., CA
fYear :
0
fDate :
0-0 0
Firstpage :
149
Lastpage :
150
Abstract :
In this study we present measurements of the intrinsic properties of three quantum systems: bound and excitonic QWs states, and QDs. We start by measuring the external properties of two saturable absorbers, one with QWs and the other with QDs. By fitting this measured external data, we then calculate the intrinsic properties of each of the three quantum systems and compare their merits as saturable absorbing materials
Keywords :
III-V semiconductors; bound states; excitons; gallium arsenide; indium compounds; laser mode locking; optical saturable absorption; semiconductor lasers; semiconductor quantum dots; semiconductor quantum wells; InxGa1-xAs; QD state; bound state; excitonic QW states; external properties; intrinsic properties; mode-locked laser; nonlinear optical effects; quantum systems; saturable absorbers; semiconductor external cavity laser; Absorption; Fiber lasers; Laser mode locking; Nonlinear optics; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Solid lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location :
Kohala Coast, HI
Print_ISBN :
0-7803-9560-3
Type :
conf
DOI :
10.1109/ISLC.2006.1708130
Filename :
1708130
Link To Document :
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