Title :
Active Mode-Locking of Quantum Dot Fabry-Perot Laser Diode
Author :
Shen, A. ; van Dijk, F. ; Renaudier, J. ; Duan, G.H. ; Lelarge, F. ; Pommereau, F. ; Poingt, F. ; Le Gouezigou, L. ; Le Gouezigou, O.
Author_Institution :
Alcatel-Thais III-V Lab., Marcoussis
Abstract :
Monolithic and mono-section InAs/InP quantum dot Fabry-Perot laser diodes are fabricated and characterized in an actively mode-locked mode for ultra-stable clock signal generation. Electrical line-width as narrow as the 10 Hz detection resolution is obtained
Keywords :
Fabry-Perot resonators; III-V semiconductors; indium compounds; laser beams; laser cavity resonators; laser mode locking; optical fabrication; optical pulse generation; quantum dot lasers; InAs-InP; active mode-locking; electrical line-width; laser diodes fabrication; quantum dot Fabry-Perot laser diode; ultra-stable clock signal generation; Clocks; Diode lasers; Fabry-Perot; High speed optical techniques; Indium phosphide; Laser mode locking; Quantum dot lasers; Spectral analysis; Stimulated emission; US Department of Transportation;
Conference_Titel :
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location :
Kohala Coast, HI
Print_ISBN :
0-7803-9560-3
DOI :
10.1109/ISLC.2006.1708132
