DocumentCode
2660878
Title
2.1-μm Wavelength InGaAs MQW DFB Lasers Grown by MOVPE using Sb Surfactant
Author
Sato, Tomonari ; Mitsuhara, Manabu ; Watanabe, Takao ; Kondo, Yasuhiro
Author_Institution
NTT Photonics Labs., NTT Corp., Atsugi
fYear
0
fDate
0-0 0
Firstpage
159
Lastpage
160
Abstract
Emission wavelengths longer than 2.1 mum and CW output power higher than 8 mW at 25degC were achieved in strained InGaAs MQW DFB lasers grown by MOVPE using an Sb surfactant
Keywords
III-V semiconductors; MOCVD; antimony; distributed feedback lasers; gallium arsenide; indium compounds; laser beams; quantum well lasers; surfactants; thermo-optical effects; vapour phase epitaxial growth; 2.1 micron; 25 C; InGaAs; MOVPE; Sb; Sb surfactant; laser CW output power; strained InGaAs MQW DFB lasers; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Heat sinks; Indium gallium arsenide; Laser tuning; Power generation; Power lasers; Quantum well devices; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location
Kohala Coast, HI
Print_ISBN
0-7803-9560-3
Type
conf
DOI
10.1109/ISLC.2006.1708135
Filename
1708135
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