Title :
Silicon nanowire memory application using hafnium oxide charge storage layer
Author :
Zhu, Xiaoxiao ; Li, Qiliang ; Ioannou, Dimitris E. ; Kimes, William A. ; Suehle, John S. ; Maslar, James E. ; Xiong, Hao D. ; Yang, Shuo ; Richter, Curt A.
Author_Institution :
George Mason Univ., Fairfax
Abstract :
This paper discusses about SiNW-based non-volatile memory based on self-aligned CVD-grown SiNWs and a HfO2 charge storage layer. With double gates and surrounding top gate high-k dielectric stacks, the SiNWs memory devices operates with a small program/erase voltage and low power consumption. Compared to previous work on SiNW SONOS memory devices, structures that use HfO2 as a top gate surrounding dielectric exhibit better gate control, a larger memory window, and a higher ON/OFF current ratio. Additionally, this self-aligned method of integrating SiNWs into memory devices is more practical for large-scale fabrication.
Keywords :
chemical vapour deposition; dielectric thin films; hafnium compounds; nanowires; semiconductor storage; silicon; HfO2; ON/OFF current ratio; Si; SiNW SONOS memory device comparison; hafnium oxide charge storage layer; high-k dielectric stacks; self-aligned CVD-growth; silicon nanowire based nonvolatile memory device; Dielectric devices; Energy consumption; Fabrication; Hafnium oxide; High-K gate dielectrics; Large scale integration; Low voltage; Nonvolatile memory; SONOS devices; Silicon;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422492
