DocumentCode
2660903
Title
High-Performance GaInNAs-TQW Edge Emitting Lasers
Author
Nakahara, K. ; Adachi, K. ; Kasai, J. ; Kitatani, T. ; Aoki, M.
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo
fYear
0
fDate
0-0 0
Firstpage
161
Lastpage
162
Abstract
It was experimentally demonstrated that a record-low threshold current of 4.3 mA was achieved in long-wavelength, 1.29 mum, GaInNAs-TQW RWG lasers. Moreover, high characteristic temperature of 115 K was attained
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; molecular beam epitaxial growth; nitrogen compounds; quantum well lasers; ridge waveguides; thermo-optical effects; waveguide lasers; 1.29 micron; 115 K; 4.3 mA; GaInNAs; MBE; characteristic temperature; molecular beam epitaxy; ridge waveguide lasers; threshold current; triple quantum well edge emitting lasers; Epitaxial growth; Gallium arsenide; Molecular beam epitaxial growth; Optical materials; Pollution measurement; Quantum well lasers; Semiconductor lasers; Temperature distribution; Threshold current; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location
Kohala Coast, HI
Print_ISBN
0-7803-9560-3
Type
conf
DOI
10.1109/ISLC.2006.1708136
Filename
1708136
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