Title :
InGaNAs Quantum Dot Lasers at 1.36 μm
Author :
Fischer, M. ; Marquardt, B. ; Bisping, D. ; Forchel, A.
Author_Institution :
Tech. Phys., Wurzburg Univ.
Abstract :
We demonstrate a pseudomorphic InGaNAs quantum dot laser with laser emission wavelength 1.36 mum grown by molecular beam epitaxy. In comparison with a nitrogen-free reference QD laser a redshift of 100 nm is observed
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; molecular beam epitaxial growth; nitrogen compounds; optical materials; quantum dot lasers; red shift; 1.36 micron; InGaNAs; active layer material; laser emission; molecular beam epitaxy; nitrogen-free QD laser; pseudomorphic quantum dot lasers; redshift; Gallium arsenide; Indium gallium arsenide; Laser modes; Laser theory; Molecular beam epitaxial growth; Optical materials; Power lasers; Quantum dot lasers; Substrates; US Department of Transportation;
Conference_Titel :
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location :
Kohala Coast, HI
Print_ISBN :
0-7803-9560-3
DOI :
10.1109/ISLC.2006.1708137
