DocumentCode
2660920
Title
InGaNAs Quantum Dot Lasers at 1.36 μm
Author
Fischer, M. ; Marquardt, B. ; Bisping, D. ; Forchel, A.
Author_Institution
Tech. Phys., Wurzburg Univ.
fYear
0
fDate
0-0 0
Firstpage
163
Lastpage
164
Abstract
We demonstrate a pseudomorphic InGaNAs quantum dot laser with laser emission wavelength 1.36 mum grown by molecular beam epitaxy. In comparison with a nitrogen-free reference QD laser a redshift of 100 nm is observed
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; molecular beam epitaxial growth; nitrogen compounds; optical materials; quantum dot lasers; red shift; 1.36 micron; InGaNAs; active layer material; laser emission; molecular beam epitaxy; nitrogen-free QD laser; pseudomorphic quantum dot lasers; redshift; Gallium arsenide; Indium gallium arsenide; Laser modes; Laser theory; Molecular beam epitaxial growth; Optical materials; Power lasers; Quantum dot lasers; Substrates; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location
Kohala Coast, HI
Print_ISBN
0-7803-9560-3
Type
conf
DOI
10.1109/ISLC.2006.1708137
Filename
1708137
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