Title :
High-Index-Contrast Oxide-Confined GaAsP/InGaAsN Multi-Quantum-Well Ridge Waveguide Lasers
Author :
Liang, Di ; Hall, Douglas C. ; Huang, Juno Yu-Ting ; Yeh, Jeng-Ya ; Mawst, Luke J.
Author_Institution :
Dept. of Electr. Eng., Notre Dame Univ., IN
Abstract :
A modified wet thermal process is used to oxidize both GaAs waveguide and GaAsP/InGaAsN MQW layers of deeply-etched ridge waveguide lasers, providing up to a 2.3 times threshold reduction and strong index-guiding for kink-free operation
Keywords :
III-V semiconductors; arsenic compounds; etching; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum well lasers; ridge waveguides; thermal analysis; waveguide lasers; GaAsP-InGaAsN; etching; high-index-contrast laser; kink-free operation; oxide-confined multi-quantum-well ridge waveguide lasers; wet thermal process; Etching; Gallium arsenide; Optical pulses; Optical waveguides; Oxidation; Quantum well devices; Ring lasers; Scanning electron microscopy; Semiconductor lasers; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location :
Kohala Coast, HI
Print_ISBN :
0-7803-9560-3
DOI :
10.1109/ISLC.2006.1708138
