DocumentCode
2660956
Title
10 Gbps Modulation of 1.3 μm GaInNAs Lasers up to 110°C
Author
Gustavsson, J.S. ; Wei, Y.-Q. ; Sadeghi, M. ; Wang, S.M. ; Larsson, A.
Author_Institution
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg
fYear
0
fDate
0-0 0
Firstpage
167
Lastpage
168
Abstract
We demonstrate uncooled 10 Gbps operation of 1.3 μm ridge waveguide GaInNAs lasers with a double quantum well active region up to 110°C. The low temperature sensitivity enables the use of a constant modulation voltage
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; nitrogen compounds; optical fibre networks; optical modulation; optical transmitters; quantum well lasers; ridge waveguides; thermo-optical effects; waveguide lasers; 1.3 micron; 10 Gbit/s; GaInNAs; constant modulation voltage; double quantum well active region; fiber optic access networks; optical transmitters; ridge waveguide GaInNAs lasers; temperature sensitivity; Bandwidth; Fiber lasers; Gallium arsenide; Optical waveguides; Quantum well lasers; Semiconductor lasers; Temperature; Threshold current; Voltage; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location
Kohala Coast, HI
Print_ISBN
0-7803-9560-3
Type
conf
DOI
10.1109/ISLC.2006.1708139
Filename
1708139
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