Title :
10 Gbps Modulation of 1.3 μm GaInNAs Lasers up to 110°C
Author :
Gustavsson, J.S. ; Wei, Y.-Q. ; Sadeghi, M. ; Wang, S.M. ; Larsson, A.
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg
Abstract :
We demonstrate uncooled 10 Gbps operation of 1.3 μm ridge waveguide GaInNAs lasers with a double quantum well active region up to 110°C. The low temperature sensitivity enables the use of a constant modulation voltage
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; nitrogen compounds; optical fibre networks; optical modulation; optical transmitters; quantum well lasers; ridge waveguides; thermo-optical effects; waveguide lasers; 1.3 micron; 10 Gbit/s; GaInNAs; constant modulation voltage; double quantum well active region; fiber optic access networks; optical transmitters; ridge waveguide GaInNAs lasers; temperature sensitivity; Bandwidth; Fiber lasers; Gallium arsenide; Optical waveguides; Quantum well lasers; Semiconductor lasers; Temperature; Threshold current; Voltage; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location :
Kohala Coast, HI
Print_ISBN :
0-7803-9560-3
DOI :
10.1109/ISLC.2006.1708139
