DocumentCode :
2660957
Title :
Silicon nanowire fabrication using novel hydrogenation-assisted deep reactive ion etching
Author :
Sammak, Amir ; Azimi, Soheil ; Mohajerzadeh, Shams ; Khadem-Hosseini, Bahar ; Fallah-Azad, Babak
Author_Institution :
Univ. of Tehran, Tehran
fYear :
2007
fDate :
12-14 Dec. 2007
Firstpage :
1
Lastpage :
2
Abstract :
A novel method for the fabrication of silicon nanostructures on silicon substrates is reported. This technique relies on a hydrogenation-assisted high aspect ratio plasma etching of silicon substrates capable of producing nanowires and microstructures. The deep vertical etching process consists of sequential oxygen-passivation and SF6-etching of silicon at a record low density plasma of 0.25-0.5W/cm2 (150-300W over an area of 20X30 cm2). A concurrent hydrogenation has been used to stimulate the vertical removal of the silicon substrate without damaging the sidewalls. These nanowires are being used for the fabrication of ultra-small vertical MOSFET transistors provided a sequential doping and etching is used to form the source and drain regions and the gate channel.
Keywords :
MOSFET; hydrogenation; nanowires; passivation; silicon; sputter etching; deep vertical etching process; high aspect ratio plasma etching; hydrogenation-assisted deep reactive ion etching; power 150 W to 300 W; sequential doping; sequential oxygen-passivation; silicon nanostructures; silicon nanowire fabrication; silicon substrates; ultra-small vertical MOSFET transistors; Annealing; Educational institutions; Etching; Fabrication; Hydrogen; Nanostructures; Nickel; Plasma applications; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
Type :
conf
DOI :
10.1109/ISDRS.2007.4422497
Filename :
4422497
Link To Document :
بازگشت