Title :
Achieving high mobilities in solution-processable organic FETs by minimizing contact effects
Author :
Hamadani, Behrang H. ; McCulloch, Iain ; Heeney, Martin ; Gundlach, David J.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg
Abstract :
Contact effects in OFETs often play an important role and care must be taken to distinguish contact-limited charge injection from bulk-limited charge transport. In this paper, we report on charge transport in organic field-effect transistors based on (2,5-bis(3- tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) as the active polymer layer with saturation field-effect mobilities as large as 1 cm2V-1s-1. The dependence of mobility on transistor channel length is investigated for devices with Au or Pt as the source and drain electrodes.
Keywords :
carrier mobility; charge injection; field effect transistors; gold; organic semiconductors; platinum; polymers; (2,5-bis(3- tetradecylthiophen-2-yl)thieno[3,2-b]thiophene); Au; Pt; active polymer layer; bulk-limited charge transport; contact effects; contact-limited charge injection; drain electrodes; organic field-effect transistors; saturation field-effect mobility; solution-processable organic FET; transistor channel length mobility; Chemical technology; Contact resistance; Educational institutions; Gold; NIST; OFETs; Organic chemicals; Organic materials; Polymers; Semiconductor materials;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422498