DocumentCode
2660968
Title
Achieving high mobilities in solution-processable organic FETs by minimizing contact effects
Author
Hamadani, Behrang H. ; McCulloch, Iain ; Heeney, Martin ; Gundlach, David J.
Author_Institution
Nat. Inst. of Stand. & Technol., Gaithersburg
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
1
Lastpage
1
Abstract
Contact effects in OFETs often play an important role and care must be taken to distinguish contact-limited charge injection from bulk-limited charge transport. In this paper, we report on charge transport in organic field-effect transistors based on (2,5-bis(3- tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) as the active polymer layer with saturation field-effect mobilities as large as 1 cm2V-1s-1. The dependence of mobility on transistor channel length is investigated for devices with Au or Pt as the source and drain electrodes.
Keywords
carrier mobility; charge injection; field effect transistors; gold; organic semiconductors; platinum; polymers; (2,5-bis(3- tetradecylthiophen-2-yl)thieno[3,2-b]thiophene); Au; Pt; active polymer layer; bulk-limited charge transport; contact effects; contact-limited charge injection; drain electrodes; organic field-effect transistors; saturation field-effect mobility; solution-processable organic FET; transistor channel length mobility; Chemical technology; Contact resistance; Educational institutions; Gold; NIST; OFETs; Organic chemicals; Organic materials; Polymers; Semiconductor materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2007 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-1892-3
Electronic_ISBN
978-1-4244-1892-3
Type
conf
DOI
10.1109/ISDRS.2007.4422498
Filename
4422498
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