Analysis of very low threshold current density GaInNAs laser at low temperature

Author

Yamada, T. ; Ishizuka, T. ; Koyama, K. ; Fujii, K. ; Hashimoto, J. ; Katsuyama, T.

Author_Institution

Transmission Devices R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama

fYear

2006

fDate

18-21 Sept. 2006

Firstpage

169

Lastpage

170

Abstract

GaInNAs lasers grown on GaAs substrates are very attractive for the application of uncooled operation with high performance at 1.3 mum region. However, fundamental material and device properties which are important for device design are still not fully understood. In this paper, we investigated temperature dependence of laser and light emitting diode (LED) characteristics for this purpose. We found that the threshold current density (Jth) of GalnNAs laser was considerably lower than that of GaInAs laser at low temperature, although it is much higher at room temperature

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; light emitting diodes; nitrogen compounds; semiconductor lasers; thermo-optical effects; 1.3 micron; GaAs; GaInNAs; GaInNAs laser; LED characteristics; light emitting diode; threshold current density; uncooled operation; Gallium arsenide; Laboratories; Light emitting diodes; Power lasers; Quantum well lasers; Research and development; Spontaneous emission; Substrates; Temperature dependence; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International

Conference_Location

Kohala Coast, HI

Print_ISBN

0-7803-9560-3

Type

conf

DOI

10.1109/ISLC.2006.1708140

Filename

1708140