Bottom contact organic transistor based on air-stable n-type F15-NTCDI

Organic field-effect transistors (OFETs) are normally studied in one of two configurations- top contact and bottom contact. It has been demonstrated that the bottom contact configuration gives inferior performance to the top contact configuration for many combinations of semiconductors, deposition conditions and material thickness, especially for n-channel materials. This report summarizes work on bottom contact devices based on air-stable n-type F15-NTCDI (F15= bis(pentadecafluorooctyl), NTCDI = naphthalenetetracarboxylic diimide).