A 0.41µA standby leakage 32Kb embedded SRAM with Low-Voltage resume-standby utilizing all digital current comparator in 28nm HKMG CMOS

Author

Maeda, Noriaki ; Komatsu, Shigenobu ; Morimoto, Masao ; Shimazaki, Yasuhisa

Author_Institution

Renesas Electron. Corp., Kodaira, Japan

fYear

2012

fDate

13-15 June 2012

Firstpage

58

Lastpage

59

Abstract

A high-performance and low-leakage current embedded SRAM for mobile phones is proposed. The proposed SRAM has a low-voltage resume-standby mode to reduce the standby leakage. An all digital current comparator is also proposed to choose a suitable standby mode. A test chip was fabricated using 28 nm HKMG CMOS technology. The proposed 32 Kb SRAM achives 0.41 μA standby leakage which is half of the conventional value, with 420 ps access.

Keywords

CMOS memory circuits; SRAM chips; comparators (circuits); mobile handsets; HKMG CMOS technology; all digital current comparator; current 0.41 muA; low-voltage resume-standby mode; mobile phones; size 28 nm; standby leakage embedded SRAM; storage capacity 32 Kbit; test chip; time 420 ps; Arrays; CMOS integrated circuits; Leakage current; Radiation detectors; Random access memory; Semiconductor device measurement; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits (VLSIC), 2012 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4673-0848-9

Electronic_ISBN

978-1-4673-0845-8

Type

conf

DOI

10.1109/VLSIC.2012.6243788

Filename

6243788