Title :
A 0.41µA standby leakage 32Kb embedded SRAM with Low-Voltage resume-standby utilizing all digital current comparator in 28nm HKMG CMOS
Author :
Maeda, Noriaki ; Komatsu, Shigenobu ; Morimoto, Masao ; Shimazaki, Yasuhisa
Author_Institution :
Renesas Electron. Corp., Kodaira, Japan
Abstract :
A high-performance and low-leakage current embedded SRAM for mobile phones is proposed. The proposed SRAM has a low-voltage resume-standby mode to reduce the standby leakage. An all digital current comparator is also proposed to choose a suitable standby mode. A test chip was fabricated using 28 nm HKMG CMOS technology. The proposed 32 Kb SRAM achives 0.41 μA standby leakage which is half of the conventional value, with 420 ps access.
Keywords :
CMOS memory circuits; SRAM chips; comparators (circuits); mobile handsets; HKMG CMOS technology; all digital current comparator; current 0.41 muA; low-voltage resume-standby mode; mobile phones; size 28 nm; standby leakage embedded SRAM; storage capacity 32 Kbit; test chip; time 420 ps; Arrays; CMOS integrated circuits; Leakage current; Radiation detectors; Random access memory; Semiconductor device measurement; Temperature measurement;
Conference_Titel :
VLSI Circuits (VLSIC), 2012 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0848-9
Electronic_ISBN :
978-1-4673-0845-8
DOI :
10.1109/VLSIC.2012.6243788
