Title :
Etch rates for Si-face 4H-SiC using H2 and a C3H8 partial pressure
Author :
VanMil, Brenda L. ; Lew, Kok-Keong ; Myers-Ward, Rachael L. ; Holm, Ronald T. ; Gaskill, D. Kurt ; Eddy, Charles R., Jr.
Author_Institution :
U.S. Naval Res. Lab., Washington
Abstract :
In an effort to calibrate nitrogen incorporation into the growing layer, a nitrogen step-doped sample was grown. In an attempt to reduce or eliminate incidental etching during pre- and post- growth temperature ramps, additional samples were etched under different propane partial pressures. With increasing propane partial pressure the etch rate decreases.
Keywords :
etching; organic compounds; semiconductor growth; silicon compounds; SiC; calibrate nitrogen incorporation; etch rates; growing layer; incidental etching; nitrogen step doped sample; propane partial pressures; Atomic measurements; Degradation; Doping; Educational institutions; Etching; Force measurement; Hydrogen; Nitrogen; Silicon carbide; Temperature;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422506
