Title :
A 28nm high-k metal-gate SRAM with Asynchronous Cross-Couple Read Assist (AC2RA) circuitry achieving 3x reduction on speed variation for single ended arrays
Author :
Lee, Robin ; Yang, Jung-Ping ; Huang, Chia-En ; Chiu, Chih-Chieh ; Kao, Wei-Shuo ; Cheng, Hong-Chen ; Liao, Hong-Jen ; Chang, Jonathan
Author_Institution :
Memory Develop Project (MDP), Taiwan Semicond. Manuf. Co. (TSMC), Hsinchu, Taiwan
Abstract :
Asynchronous Cross-Couple Read Assist (AC2RA) circuitry scheme was invented for single-ended sensing to minimize speed variation in 28nm HKMG process. It improves SRAM array speed variation by 63.3% which is adequate to cover 6σ variation. Access time is also boosted by faster sensing.
Keywords :
SRAM chips; asynchronous circuits; high-k dielectric thin films; sensor arrays; AC2RA circuitry; HKMG process; SRAM array speed variation; asynchronous cross-couple read assist circuitry scheme; high-k metal-gate SRAM; single ended sensing arrays; size 28 nm; Discharges (electric); Loading; MOS devices; Partial discharges; Random access memory; Sensors; Silicon;
Conference_Titel :
VLSI Circuits (VLSIC), 2012 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0848-9
Electronic_ISBN :
978-1-4673-0845-8
DOI :
10.1109/VLSIC.2012.6243791
