• DocumentCode
    2661131
  • Title

    A 28nm high-k metal-gate SRAM with Asynchronous Cross-Couple Read Assist (AC2RA) circuitry achieving 3x reduction on speed variation for single ended arrays

  • Author

    Lee, Robin ; Yang, Jung-Ping ; Huang, Chia-En ; Chiu, Chih-Chieh ; Kao, Wei-Shuo ; Cheng, Hong-Chen ; Liao, Hong-Jen ; Chang, Jonathan

  • Author_Institution
    Memory Develop Project (MDP), Taiwan Semicond. Manuf. Co. (TSMC), Hsinchu, Taiwan
  • fYear
    2012
  • fDate
    13-15 June 2012
  • Firstpage
    64
  • Lastpage
    65
  • Abstract
    Asynchronous Cross-Couple Read Assist (AC2RA) circuitry scheme was invented for single-ended sensing to minimize speed variation in 28nm HKMG process. It improves SRAM array speed variation by 63.3% which is adequate to cover 6σ variation. Access time is also boosted by faster sensing.
  • Keywords
    SRAM chips; asynchronous circuits; high-k dielectric thin films; sensor arrays; AC2RA circuitry; HKMG process; SRAM array speed variation; asynchronous cross-couple read assist circuitry scheme; high-k metal-gate SRAM; single ended sensing arrays; size 28 nm; Discharges (electric); Loading; MOS devices; Partial discharges; Random access memory; Sensors; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits (VLSIC), 2012 Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4673-0848-9
  • Electronic_ISBN
    978-1-4673-0845-8
  • Type

    conf

  • DOI
    10.1109/VLSIC.2012.6243791
  • Filename
    6243791
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2661131