X-ray moire pattern in defect-free silicon-on-insulator wafers prepared by oxygen ion implantation

Author

Shimura, F. ; Jiang, B.L. ; Rozgonyi, G.A.

Author_Institution

Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA

fYear

1989

fDate

3-5 Oct 1989

Firstpage

112

Lastpage

113

Abstract

Summary form only given. The powerful capabilities of Lang transmission X-ray topography (XRT) in characterizing the crystallographic perfection of the substrate silicon and the top of superficial silicon layer in separation by implantation of oxygen (SIMOX) wafers is discussed. Moire patterns formed by the two superimposed lattices of substrate silicon and top silicon layer in SIMOX wafers have been imaged under a variety of diffraction conditions and used to provide an extensive evaluation of the SIMOX process conditions

Keywords

X-ray crystallography technique; X-ray diffraction examination of materials; elemental semiconductors; ion implantation; oxygen; semiconductor technology; semiconductor-insulator boundaries; silicon; Lang transmission X-ray topography; O ion implantation; SIMOX; SIMOX process conditions; SIMOX wafers; SOI wafers; Si-SiO₂; X-ray moire pattern; XRT; crystallographic perfection characterization; defect free Si on insulator; diffraction conditions; semiconductors; superficial Si layer evaluation; superimposed lattices of Si; Annealing; Crystallography; Diffraction; Ion implantation; Lattices; Oxygen; Silicon on insulator technology; Strain measurement; Substrates; Surface topography;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1989., 1989 IEEE

Conference_Location

Stateline, NV

Type

conf

DOI

10.1109/SOI.1989.69792

Filename

69792