Title :
80nm In0.52Al0.48As/In0.53Ga0.47As/InAs0.3P0.7 Composite channel HEMT with an fT of 280GHz
Author :
Liu, D. ; Hudait, M. ; Lin, Y. ; Ringel, S.A. ; Lu, W.
Author_Institution :
Ohio State Univ. Columbus, Columbus
Abstract :
We have demonstrated a high performance 80nm gate In0.52Al0.48As/In0.53Ga0.47As/InAs0.3P0.7 composite channel HEMT. The device has a gm as high as 1 S/mm and an fT 280 GHz. To complete this study, the noise and power performance of such device will be further studied and compared with conventional InGaAs channel devices in near future.
Keywords :
III-V semiconductors; aluminium compounds; arsenic compounds; gallium arsenide; high electron mobility transistors; In0.52Al0.48As-In0.53Ga0.47As-InAs0.3P0.7; InGaAs channel devices; composite channel HEMT; frequency 280 GHz; noise performance; power performance; size 80 nm; Frequency; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; Photonic band gap; Plasma applications; Plasma devices; Threshold voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422511
