Title :
Epitaxially grown graphene field-effect transistors with electron mobility exceeding 1500 cm2/Vs and hole mobility exceeding 3400 cm2/Vs
Author :
Wu, Yanqing ; Ye, Peide D. ; Capano, Michael A. ; Shen, Tian ; Xuan, Yi ; Sui, Yang ; Qi, Minghao ; Cooper, James A., Jr.
Author_Institution :
Purdue Univ., West Lafayette
Abstract :
In this paper, we report, for the first time, the observation of n-type and p-type transition on epitaxially grown graphene films by top-gate bias. More importantly, the measured electron and hole mobility on fabricated top-gate graphene field-effect transistors exceeds 1500 cm2/Vs and 3400 cm2/Vs, respectively.
Keywords :
electron mobility; epitaxial growth; field effect transistors; hole mobility; electron mobility; epitaxially grown graphene field-effect transistors; hole mobility; top-gate bias; Educational institutions; Electron mobility; FETs; Gold; Nanotechnology; Silicon carbide; Substrates; Surface morphology; Temperature; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422514
