• DocumentCode
    2661211
  • Title

    Epitaxially grown graphene field-effect transistors with electron mobility exceeding 1500 cm2/Vs and hole mobility exceeding 3400 cm2/Vs

  • Author

    Wu, Yanqing ; Ye, Peide D. ; Capano, Michael A. ; Shen, Tian ; Xuan, Yi ; Sui, Yang ; Qi, Minghao ; Cooper, James A., Jr.

  • Author_Institution
    Purdue Univ., West Lafayette
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, we report, for the first time, the observation of n-type and p-type transition on epitaxially grown graphene films by top-gate bias. More importantly, the measured electron and hole mobility on fabricated top-gate graphene field-effect transistors exceeds 1500 cm2/Vs and 3400 cm2/Vs, respectively.
  • Keywords
    electron mobility; epitaxial growth; field effect transistors; hole mobility; electron mobility; epitaxially grown graphene field-effect transistors; hole mobility; top-gate bias; Educational institutions; Electron mobility; FETs; Gold; Nanotechnology; Silicon carbide; Substrates; Surface morphology; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422514
  • Filename
    4422514
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2661211