Title :
Top-gated field effect transistors fabricated using thermally-oxidized silicon nanowires synthesized by vapor-liquid solid growth
Author :
Tsung-ta Ho ; Bangzhi Liu ; Eichfeld, S. ; Lew, Kok-keong ; Mohney, S. ; Redwing, J. ; Mayer, T.
Author_Institution :
Pennsylvania State Univ., University Park
Abstract :
This paper discusses the oxidation of p- and n-type silicon nanowires (SiNWs) grown by the vapor-liquid-solid (VLS) method and their integration into top-gated FETs. The oxidization of the as-grown SiNWs was carried out at 900degC in dry oxygen following standard cleaning process (SCI & SC2). The resulting Si/SiO2 core-shell NWs were integrated into top-gated FETs where the SiO2 shell served as the gate dielectric, and their subthreshold properties were measured to investigate the electrical properties of the Si/SiO2 interface. Plan-view and cross-sectional transmission electron microscopy (TEM) analysis was used to study the oxide shell thickness of SiNWs.
Keywords :
field effect transistors; nanowires; transmission electron microscopy; Si-SiO2; TEM analysis; n-type silicon nanowires; p- type silicon nanowires; thermally-oxidized silicon nanowires; top-gated field effect transistors; transmission electron microscopy; vapor-liquid-solid growth; Circuits; Educational institutions; FETs; Hysteresis; Interface states; Nanowires; Oxidation; Silicon; Solids; Substrates;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422515
