DocumentCode :
2661261
Title :
Light emitting diodes on glass and silicon substrates fabricated using novel low temperature hydrogenation-assisted nano-crystallization of silicon thin films
Author :
Fallah-Azad, B. ; Abdi, Y. ; Mohajerzadeh, S. ; Jamei, M. ; Hashemi, P. ; Robertson, M.D.
Author_Institution :
Univ. of Tehran, Tehran
fYear :
2007
fDate :
12-14 Dec. 2007
Firstpage :
1
Lastpage :
2
Abstract :
Nano-porous silicon films have drawn significant attention for the realization of light emitting diodes on silicon substrates. We report a novel low temperature fully radio-frequency plasma hydrogenation assisted process to realize light emitting diodes on glass substrates. Such devices can be of great importance for lighting applications, as an alternative approach for organic LED´s or I-V compounds. The process outlined in this paper, can be used to realize large area light emitting diodes on inexpensive substrates. All the processing steps remain below 450degC fully compatible with normal glass substrates.
Keywords :
hydrogenation; light emitting diodes; nanoporous materials; semiconductor thin films; silicon; glass substrate; light emitting diodes; low temperature hydrogenation assisted nano crystallization; silicon substrate; silicon thin films; Etching; Fabrication; Glass; Light emitting diodes; Plasma applications; Plasma immersion ion implantation; Plasma temperature; Semiconductor thin films; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
Type :
conf
DOI :
10.1109/ISDRS.2007.4422517
Filename :
4422517
Link To Document :
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