Title :
Large Electro-Optic Effect in Tensile Strained Ge-on-Si Films
Author :
Jongthammanurak, S. ; Liu, J.F. ; Wada, K. ; Cannon, D. ; Danielson, D.T. ; Pan, D. ; Michel, J. ; Kimerling, L.C.
Author_Institution :
Dept. of Mater. Sci. & Eng., Massachusetts Inst. of Technol., Cambridge, MA
Abstract :
We report the observation of an enhanced electro-optic effect in the weakly absorbing regime for tensile strained Ge epitaxial films. With Deltan/F=260 pm/V and Deltaalpha/alpha-3 the material has significant potential for field-induced phase or electro-absorption modulator devices
Keywords :
electro-optical effects; electro-optical modulation; elemental semiconductors; germanium; semiconductor epitaxial layers; Ge-Si; Si; electro-absorption modulator device; electro-optic effect; tensile strained Ge-on-Si films; Absorption; Boron; Doping; Materials science and technology; Optical films; Optical materials; Optical modulation; Optical signal processing; PIN photodiodes; Phase modulation;
Conference_Titel :
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0096-1
DOI :
10.1109/GROUP4.2006.1708156
