DocumentCode
2661352
Title
Improvement of the performance of strained 0.13 μm MOSFETs mounted on flexible plastic substrates
Author
Kao, H.L. ; Liao, C.C. ; McAlister, S.P. ; Chin, Albert
Author_Institution
Chang Gung Univ., Kwei-Shan
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
1
Lastpage
2
Abstract
The RF performance of 0.18mum thin-body (30mum) Si MOSFETs can be enhanced by applying mechanical strain. Here we report the DC to RF performance of 0.13mum thin-body (40mum) Si MOSFETs on plastic. The data were close to control 0.13m devices, indicating negligible process-related degradation. The DC- RF performance was enhanced by applying 0.7% tensile strain. The DC-RF performance improvements were confirmed by TMA simulations for strained 0.13mum MOSFETs.
Keywords
MOSFET; substrates; DC-RF performance; plastic substrate; size 0.13 mum; strained 0.13 mum MOSFET; Capacitive sensors; Educational institutions; Integrated circuit noise; MOSFETs; Microstrip; Noise figure; Plastics; Radio frequency; Strain measurement; Tensile strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2007 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-1892-3
Electronic_ISBN
978-1-4244-1892-3
Type
conf
DOI
10.1109/ISDRS.2007.4422523
Filename
4422523
Link To Document