• DocumentCode
    2661401
  • Title

    Implementation and study of photovoltaic cells based on InP lattice-matched InGaAs and InGaAsP

  • Author

    Emziane, Mahieddine ; Tuley, Richard ; Nicholas, Robin J. ; Rogers, Dave C. ; Cannard, Paul J. ; Dosanjh, Jeevan

  • Author_Institution
    Univ. of Oxford, Oxford
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In a recent paper, we have shown that optimum device performance can be achieved by using relatively thin structures and moderate doping concentrations in InGaAs(P) photovoltaic (PV) cells. We report in this paper the implementation and assessment of single-junction InGaAs and InGaAsP PV cells lattice-matched to InP. Three bandgaps (0.74, 1.0 and 1.2 eV) and both n/p and p/n structure configurations have been studied.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; photovoltaic cells; InGaAsP; bandgaps; photovoltaic cells; structure configurations; Current density; Doping; Educational institutions; Indium gallium arsenide; Indium phosphide; Laboratories; Lighting; Photonic band gap; Photovoltaic cells; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422526
  • Filename
    4422526
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2661401