Title :
Vertical AND (V-AND) array: High density, high speed, and reliable flash array
Author :
Seongjae Cho Han Park ; Jung Hun Lee ; Gil Seong Lee ; Doo-Hyun Kim ; Jang-Gn Yoon ; Yoon Kim
Author_Institution :
Seoul Nat. Univ., Seoul
Abstract :
This paper proposes a novel V-AND array, and characterizes its memory performances through 3-D simulation. High density AND array is possible due to the vertical channel structure, and the program operation using the DEBI effect removes the program disturbances effectively. By virtue of high density, fast sensing speed, and high reliability, V-AND can be a good candidate for the next generation mass storage flash memories.
Keywords :
circuit reliability; circuit simulation; flash memories; logic arrays; 3-D simulation; V-AND array; channel structure; reliable flash array; vertical and array; Charge carrier processes; DSL; Dielectrics; Educational institutions; Flash memory; Gas insulated transmission lines; Isolation technology; SONOS devices; Semiconductor device reliability; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422528
