Title :
Ge/Si hetero-nanocrystal MOSFET memories
Author :
Liu, Jianlin ; Li, Bei
Author_Institution :
Univ. of California, Riverside
Abstract :
MOSFET memory devices with Ge/Si HNCs (hetero-nanocrystal) floating gate were fabricated. A superior performance was demonstrated, including larger storage capability, longer retention time, and faster programming speed, which makes Ge/Si HNCs memories promising candidate to replace Si NCs memories.
Keywords :
MOSFET circuits; germanium; integrated memory circuits; nanostructured materials; nanotechnology; silicon; Ge-Si; MOSFET memory; hetero-nanocrystal floating gate; memory devices; Atomic force microscopy; Educational institutions; Germanium; Hetero-nanocrystal memory; Logic circuits; Low voltage; MOSFET circuits; Nanocrystals; Nonvolatile memory; Silicon;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422529
