• DocumentCode
    2661486
  • Title

    A high voltage PMOS transistor for quenching of geiger-mode avalanche photodiodes in deep submicron CMOS technologies

  • Author

    Marwick, Miriam Adlerstein ; Andreou, Andreas G.

  • Author_Institution
    Johns Hopkins Univ., Hopkins
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work, we present a quenching transistor with a high voltage tolerance at the drain designed to allow for safe operation of a single-photon-counting avalanche photodiode fabricated in the TSMC 0.18 mum, 1.8 V process.
  • Keywords
    CMOS integrated circuits; avalanche photodiodes; integrated circuit design; Geiger-mode avalanche photodiodes; PMOS transistor; deep submicron CMOS technology; quenching transistor; size 0.18 mum; voltage 1.8 V; Avalanche photodiodes; Breakdown voltage; CMOS process; CMOS technology; Circuits; Doping; Educational institutions; Isolation technology; MOSFETs; Paper technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422531
  • Filename
    4422531
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2661486