Title :
Composition and Strain of Coherent Si 1-x Ge x Islands on Si
Author :
Lockwood, D.J. ; Wu, X. ; Baribeau, J.-M.
Author_Institution :
Inst. for Microstruct. Sci., Nat. Res. Council of Canada, Ottawa, Ont.
Abstract :
In this paper, the study of alloy composition on SiGe island growth by MBE under similar conditions has shown that the Ge migrates towards the center of the large islands to maintain epitaxial growth and that the most uniform structures are obtained at higher Ge composition when the built-in strain is also higher
Keywords :
Ge-Si alloys; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; MBE; Si; Si(100) surfaces; Si1-xGex; alloy composition; coherent semiconductor island growth; epitaxial growth; strain profile; Capacitive sensors; Chemicals; Energy resolution; Germanium alloys; Molecular beam epitaxial growth; Nanostructures; Silicon alloys; Temperature; X-ray diffraction; X-ray imaging;
Conference_Titel :
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0096-1
DOI :
10.1109/GROUP4.2006.1708170
