• DocumentCode
    2661589
  • Title

    Tunnel diode/transistor differential comparator

  • Author

    Liu, Qingmin ; Sutar, Surajit ; Seabaugh, Alan

  • Author_Institution
    Dept. of Electr. Eng., Notre Dame Univ., IN, USA
  • fYear
    2004
  • fDate
    4-6 Aug. 2004
  • Firstpage
    16
  • Lastpage
    21
  • Abstract
    A new tunnel diode/transistor circuit topology is reported, which both increases speed and reduces power in differential comparators. This circuit topology is of special interest for use in direct digital synthesis applications. The circuit topology can be extended to provide performance improvements in high speed logic and signal processing applications. The circuits are designed based on InP/GaAsSb double heterojunction bipolar transistors and AlAs/InGaAs/AlAs resonant tunneling diodes. A self-aligned and scalable fabrication approach using nitride sidewalls and chemical mechanical polishing is outlined.
  • Keywords
    III-V semiconductors; aluminium compounds; chemical mechanical polishing; comparators (circuits); direct digital synthesis; gallium arsenide; heterojunction bipolar transistors; indium compounds; network topology; resonant tunnelling diodes; AlAs-InGaAs-AlAs; InP-GaAsSb; chemical mechanical polishing; differential comparator; direct digital synthesis; double heterojunction bipolar transistors; high speed logic; nitride sidewalls; resonant tunneling diodes; signal processing; tunnel diode/transistor circuit topology; Circuit synthesis; Circuit topology; Diodes; Double heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Logic circuits; RLC circuits; Signal processing; Signal synthesis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on
  • Print_ISBN
    981-256-196-X
  • Type

    conf

  • DOI
    10.1109/LECHPD.2004.1549665
  • Filename
    1549665