Title :
Tunnel diode/transistor differential comparator
Author :
Liu, Qingmin ; Sutar, Surajit ; Seabaugh, Alan
Author_Institution :
Dept. of Electr. Eng., Notre Dame Univ., IN, USA
Abstract :
A new tunnel diode/transistor circuit topology is reported, which both increases speed and reduces power in differential comparators. This circuit topology is of special interest for use in direct digital synthesis applications. The circuit topology can be extended to provide performance improvements in high speed logic and signal processing applications. The circuits are designed based on InP/GaAsSb double heterojunction bipolar transistors and AlAs/InGaAs/AlAs resonant tunneling diodes. A self-aligned and scalable fabrication approach using nitride sidewalls and chemical mechanical polishing is outlined.
Keywords :
III-V semiconductors; aluminium compounds; chemical mechanical polishing; comparators (circuits); direct digital synthesis; gallium arsenide; heterojunction bipolar transistors; indium compounds; network topology; resonant tunnelling diodes; AlAs-InGaAs-AlAs; InP-GaAsSb; chemical mechanical polishing; differential comparator; direct digital synthesis; double heterojunction bipolar transistors; high speed logic; nitride sidewalls; resonant tunneling diodes; signal processing; tunnel diode/transistor circuit topology; Circuit synthesis; Circuit topology; Diodes; Double heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Logic circuits; RLC circuits; Signal processing; Signal synthesis;
Conference_Titel :
High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
981-256-196-X
DOI :
10.1109/LECHPD.2004.1549665
