DocumentCode :
2661600
Title :
Introducing Carrier Localisation in Total Internal Reflection Optical Switches to Restrict Carrier Diffusion in the Guiding Layer
Author :
Thomson, D. ; Reed, G.T. ; Gardes, F.Y. ; Mashanovich, G.Z. ; Howe, S.
Author_Institution :
Adv. Technol. Inst., Surrey Univ., Guildford
fYear :
2006
fDate :
13-15 Sept. 2006
Firstpage :
78
Lastpage :
80
Abstract :
Previous total internal reflection based switches have suffered from the diffusion of carriers in the guiding layer leading to inefficient reflection and carrier injection. In our proposed device this problem is overcome by using a SiO2 barrier
Keywords :
carrier lifetime; electro-optical switches; light reflection; optical films; optical waveguides; silicon compounds; SiO2; carrier diffusion; carrier injection; carrier localisation; carrier restrictive barrier; guiding layer; optical switches; optical waveguide; total internal reflection; Anodes; Cathodes; Doping; Optical propagation; Optical reflection; Optical switches; Optical waveguides; Region 10; Silicon; Slabs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0096-1
Type :
conf
DOI :
10.1109/GROUP4.2006.1708171
Filename :
1708171
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2661600
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