Title :
Low energy SIMOX (LES)
Author :
Namavar, F. ; Cortesi, E. ; Buchanan, B. ; Sioshansi, P.
Author_Institution :
Spire Corp., Bedford, MA, USA
Abstract :
Results and mechanisms involved in producing high-quality separation by implantation of oxygen (SIMOX) material at low energy (30-80 keV) are presented and discussed in detail. The theoretical advantages of using low-energy implantation are derived and verified. Some of these advantages are: (1) a continuous oxide layer can be formed with a smaller dose, resulting in a faster and more economical SIMOX process; (2) introduction of contaminants is reduced because of reduced implantation time; and (3) the process is viable over a much wider range of implantation facilities. This process should have a great impact on production of SOI for military and commercial purposes not only because of reduced cost due to reducing implantation time by an order of magnitude, but also because it provides a means to produce SIMOX structures with an ultrathin SiO2 layer
Keywords :
ion implantation; semiconductor technology; semiconductor-insulator boundaries; 30 to 80 keV; Si-SiO2; contamination reduction; economical SIMOX process; high quality SIMOX material; high-quality separation by implantation; low energy SIMOX; low-energy implantation; reduced cost; reduced implantation time; smaller dose; ultrathin SiO2 layer; wider range of implantation facilities; Annealing; Contracts; Costs; Fabrication; Oxygen; Paramagnetic resonance; Power generation economics; Production; Silicon; Temperature;
Conference_Titel :
SOS/SOI Technology Conference, 1989., 1989 IEEE
Conference_Location :
Stateline, NV
DOI :
10.1109/SOI.1989.69794
