DocumentCode :
2661626
Title :
Characterization of latch-up in CMOS inverters in pulsed electromagnetic interference environments
Author :
Kim, Kyechong ; Iliadis, Agis A.
Author_Institution :
Univ. of Maryland, College Park
fYear :
2007
fDate :
12-14 Dec. 2007
Firstpage :
1
Lastpage :
2
Abstract :
Latch-up effects in cascaded CMOS inverters due to pulsed electromagnetic interference (PEMI) from high power microwave sources, is reported. The cascaded inverters were designed and fabricated consisting of two identical inverters with a width to length ratio (W/L) of 3.2 mum/1.6 mum for n MOSFETs and 9.6 mum/1.6mum for p MOSFETs. The inverters were packaged and placed in a PC board for measurements.
Keywords :
CMOS integrated circuits; MOSFET; electromagnetic interference; invertors; MOSFET; PC board; cascaded CMOS inverters; latch-up; power microwave sources; pulsed electromagnetic interference; EMP radiation effects; Electromagnetic interference; Frequency; Microwave devices; Microwave measurements; Pulse amplifiers; Pulse generation; Pulse inverters; Pulse measurements; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
Type :
conf
DOI :
10.1109/ISDRS.2007.4422538
Filename :
4422538
Link To Document :
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