DocumentCode
2661639
Title
Analytical Modeling of Semiconductor Losses in Matrix Converters
Author
Wang, Bingsen ; Venkataramanan, Giri
Author_Institution
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI
Volume
1
fYear
2006
fDate
14-16 Aug. 2006
Firstpage
1
Lastpage
8
Abstract
Analytical models for estimating semiconductor losses are commonly used for heatsink selection in the design process of power converters. While such models are established and widely known for different DC-DC converters, rectifiers and inverters, they have not been developed for matrix converters. Therefore, one has to resort to the use of numerical simulation for this purpose. Although numerical simulation is a straightforward approach as long as the power switching devices are properly modeled, it is typically time consuming and requires accurate physical models for the device. In this paper, an analytical approach to characterizing the semiconductor losses of the conventional matrix converter (CMC) and the indirect matrix converter (IMC) is presented. The analytical results are verified against the simulation results from a detailed numerical model under a wide variety of operating conditions
Keywords
losses; matrix convertors; numerical analysis; power semiconductor devices; heatsink selection; matrix converter; numerical simulation; power converter; power switching devices; semiconductor losses; Analytical models; Insulated gate bipolar transistors; Matrix converters; Numerical simulation; Power semiconductor switches; Predictive models; Switching converters; Switching loss; Topology; Voltage; conduction loss; conventional matrix converter (CMC); indirect matrix converter (IMC); simulation; switching loss;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Motion Control Conference, 2006. IPEMC 2006. CES/IEEE 5th International
Conference_Location
Shanghai
Print_ISBN
1-4244-0448-7
Type
conf
DOI
10.1109/IPEMC.2006.4777987
Filename
4777987
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