DocumentCode
2661646
Title
Atomically flat III-antimonide epilayers grown using liquid phase epitaxy
Author
Kumar, Anika ; Sridaran, Sujatha ; Dutta, Partha S.
Author_Institution
Dept. of Electr., Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
fYear
2004
fDate
4-6 Aug. 2004
Firstpage
28
Lastpage
33
Abstract
A novel process has been developed which allows the growth of device grade ultra-smooth epitaxial layers of antimonide based III-V compounds with a controlled thickness using liquid phase epitaxy (LPE). GaSb epilayers (with thickness in the range of 20-50 μm) on GaSb single crystalline substrates have been grown with a root mean square surface roughness of less than 1 nm over an area of 5∮ ← 5 μm.
Keywords
III-V semiconductors; epitaxial layers; gallium compounds; liquid phase epitaxial growth; surface roughness; GaSb; GaSb epilayers; antimonide based III-V compounds; atomically flat III-antimonide epilayers; liquid phase epitaxy; single crystalline substrates; surface roughness; ultra-smooth epitaxial layers; Atomic layer deposition; Crystallization; Epitaxial growth; Epitaxial layers; III-V semiconductor materials; Root mean square; Rough surfaces; Substrates; Surface roughness; Thickness control;
fLanguage
English
Publisher
ieee
Conference_Titel
High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN
981-256-196-X
Type
conf
DOI
10.1109/LECHPD.2004.1549667
Filename
1549667
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