Native defect compensation in III-antimonide bulk substrates

Author

Pino, Robinson ; Ko, Youngok ; Dutta, Partha S.

Author_Institution

Dept. of Electr., Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

2004

fDate

4-6 Aug. 2004

Firstpage

34

Lastpage

39

Abstract

As-grown, undoped III-antimonide bulk substrates contain high concentration of native defects resulting in high residual carrier density. In this paper, we have demonstrated that native defects can be compensated in bulk substrates of GaSb, InSb, and Ga_1-xIn_xSb via impurity doping and low temperature growth from nonstoichiometric melts and solutions. Decrease in residual carrier concentration up to one order of magnitude at 300 K and three orders of magnitude at 77 K have been achieved.

Keywords

III-V semiconductors; crystal defects; crystal growth from melt; crystal growth from solution; gallium compounds; indium compounds; semiconductor doping; 300 K; 77 K; GaSb; InSb; as-grown bulk substrates; high residual carrier density; low temperature growth; native defect compensation; nonstoichiometric melts; nonstoichiometric solutions; residual carrier concentration; undoped III-antimonide bulk substrates; via impurity doping; Crystals; Gallium compounds; High speed optical techniques; III-V semiconductor materials; Optical devices; Photonic band gap; Substrates; Systems engineering and theory; Tellurium; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on

Print_ISBN

981-256-196-X

Type

conf

DOI

10.1109/LECHPD.2004.1549668

Filename

1549668