Title :
Fabrication of High Quality AlGaSb/AlSb-distributed Bragg Reflectors on Si
Author :
Akahane, K. ; Yamamoto, N. ; Gozu, S. ; Ueta, A. ; Tsuchiya, M.
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol., Tokyo
Abstract :
We fabricated AlGaSb/AlSb-distributed Bragg reflectors (DBRs) on Si(001) substrates. The use of an AlSb initiation layer enabled us to fabricate high-quality AlGaSb/AlSb films on the Si substrates. A well-defined AlGaSb/AlSb-DBR structure was observed using a scanning electron microscope. A stop band of 100 nm centered at 1500 nm was observed using a Fourier transform infrared spectrometer
Keywords :
Fourier transform spectra; III-V semiconductors; aluminium compounds; antimony compounds; distributed Bragg reflectors; gallium compounds; infrared spectra; integrated optics; optical fabrication; scanning electron microscopy; semiconductor thin films; 100 nm; 1500 nm; AlGaSb-AlSb; DBR; Fourier transform infrared spectrometer; Si; high quality distributed Bragg reflectors fabrication; scanning electron microscope; Distributed Bragg reflectors; Fabrication; Fourier transforms; Infrared spectra; Optical films; Scanning electron microscopy; Semiconductor films; Spectroscopy; Substrates; Vertical cavity surface emitting lasers;
Conference_Titel :
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0096-1
DOI :
10.1109/GROUP4.2006.1708176
