A carbon nanotube capacitor structure

In this abstract, we present additional details on a new capacitor, CNCAP (carbon nanotube capacitor), compare it to existing integrated circuit capacitor technologies, and address its manufacturability. Properties of metallic, single wall CNTs (large surface area and relatively low resistance) allow for the creation of a very high density capacitor structure. In the CNCAP, each CNT electrode is surrounded by four CNTs connected to the opposing electrode. This structure allows for a potential capacitance/area greater than 100 fF/mum². The electrical model of two parallel metallic, single wall, CNTs. The principle scattering mechanism in a CNT is due to acoustic phonons (under low bias) and the ideal CNT resistance is based on its length R = (h/4e²)(1+L/lambda_acc) where lambda_acc is the mean free path. The inductance, L, of the CNTs is taken as 4.07 nH/mum, which corresponds to the kinetic inductance. The quantum capacitance per unit length (C_Q) of the CNTs is 388 aF/mum.