Title :
Two-dimensional analytical modeling and simulation of retrograde doped HMG MOSFET
Author :
Gupta, R.S. ; Goel, Kirti ; Gupta, Mridula ; Saxena, Manoj
Author_Institution :
Dept. of Electron. Sci., Delhi Univ., New Delhi, India
Abstract :
A novel device architecture, retrograde doped HMG (hetero-material gate) MOSFET is presented which combines the advantages of an epitaxial layer in the channel region with the HMG MOSFET. This combination tackles the problems of short channel effects (SCEs), hot electron effects and gate transport efficiency in a single structure by reducing threshold voltage and modifying the electric field pattern and surface potential profile along the channel. The expression for the 2D potential profile in the channel has been derived. The results of surface potential, electric field and threshold voltage have been plotted and compared with their corresponding simulated results.
Keywords :
MOSFET; epitaxial layers; hot carriers; semiconductor device models; surface potential; 2D analytical modeling; channel region; electric field pattern; epitaxial layer; gate transport efficiency; hetero-material gate MOSFET; hot electron effects; retrograde doped MOSFET; short channel effects; surface potential profile; threshold voltage; Analytical models; Educational institutions; Electric potential; Electrons; Inorganic materials; Laboratories; MOSFET circuits; Poisson equations; Semiconductor devices; Threshold voltage;
Conference_Titel :
High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
981-256-196-X
DOI :
10.1109/LECHPD.2004.1549671
