DocumentCode
2661744
Title
A non-linear TCAD large signal model to enhance the linearity of transistor
Author
Kashif, A. ; Svensson, C. ; Azam, S. ; Wahab, Q.
Author_Institution
Linkoping Univ., Linkoping
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
1
Lastpage
2
Abstract
In this paper, the proposed technique can be used to study the internal device non-linearity by TCAD device level simulations to enhance the device performance by physical structure/doping.
Keywords
semiconductor device models; semiconductor doping; technology CAD (electronics); TCAD device level simulations; internal device nonlinearity; large signal model; nonlinear TCAD; transistor linearity; Circuit simulation; Computational modeling; Design automation; Integrated circuit modeling; Linearity; Mathematical model; Performance evaluation; Radio frequency; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2007 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-1892-3
Electronic_ISBN
978-1-4244-1892-3
Type
conf
DOI
10.1109/ISDRS.2007.4422546
Filename
4422546
Link To Document