Title :
A non-linear TCAD large signal model to enhance the linearity of transistor
Author :
Kashif, A. ; Svensson, C. ; Azam, S. ; Wahab, Q.
Author_Institution :
Linkoping Univ., Linkoping
Abstract :
In this paper, the proposed technique can be used to study the internal device non-linearity by TCAD device level simulations to enhance the device performance by physical structure/doping.
Keywords :
semiconductor device models; semiconductor doping; technology CAD (electronics); TCAD device level simulations; internal device nonlinearity; large signal model; nonlinear TCAD; transistor linearity; Circuit simulation; Computational modeling; Design automation; Integrated circuit modeling; Linearity; Mathematical model; Performance evaluation; Radio frequency; Testing; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422546
