Numerical investigate of base doping for minimum base transit time

Author

Rahmani, Abolfazl ; Seryasat, Omid ; Hosseini, S.E.

Author_Institution

Eng. Dept., Sabzevar Tarbiat Moallem Univ., Sabzevar, Iran

Volume

2

fYear

2010

fDate

3-5 Oct. 2010

Abstract

In this paper numerical optimum base doping for minimum base transit time is presented. The bandgap-narrowing effect, high-injection effect, and carrier velocity saturation at the base edge of the base collector junction, and also doping and field dependence of mobility, are considered. Many doping profile are investigated including, linear, exponential doping concentration, we assumed uniform, exponentially and Gaussian doping profiles. Base transit time is investigated numerically for optimum base doping profile.

Keywords

bipolar transistors; doping profiles; semiconductor doping; Gaussian doping profile; bandgap-narrowing effect; base collector junction; bipolar junction transistor; carrier velocity saturation; exponential doping concentration; high-injection effect; linear doping concentration; minimum base transit time; mobility field dependence; numerical optimum base doping; Analytical models; Current density; Doping profiles; Junctions; Niobium; Transistors; Base transit time; bipolar junction transistors; high injection;

fLanguage

English

Publisher

ieee

Conference_Titel

Software Technology and Engineering (ICSTE), 2010 2nd International Conference on

Conference_Location

San Juan, PR

Print_ISBN

978-1-4244-8667-0

Electronic_ISBN

978-1-4244-8666-3

Type

conf

DOI

10.1109/ICSTE.2010.5608777

Filename

5608777