Analysis of operational transconductance amplifier for application in GHz frequency range

Author

Ghori, A. ; Ghosh, P.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Syracuse Univ., NY, USA

fYear

2004

fDate

4-6 Aug. 2004

Firstpage

66

Lastpage

71

Abstract

Operational transconductance amplifier (OTA) is an excellent current mode device suited very well for VLSI implementation. In this contribution we report realization of OTA using silicon-on-insulator (SOI) structure based MOSFETs and compared them to OTA designed with bulk MOSFET. SOI based OTA outperformed bulk MOSFET OTA giving close to 10 GHz improvement in high frequency f_T. A band-pass filter was implemented with SOI based OTA with a center frequency of 7 GHz and a bandwidth of 480 kHz.

Keywords

MOS integrated circuits; MOSFET; current-mode circuits; microwave amplifiers; operational amplifiers; silicon-on-insulator; 480 kHz; 7 GHz; VLSI implementation; band-pass filter; bulk MOSFET; current mode device; operational transconductance amplifier; silicon-on-insulator structure; Application software; Capacitance; Circuits; Computer science; Frequency; MOSFETs; Operational amplifiers; Silicon on insulator technology; Transconductance; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on

Print_ISBN

981-256-196-X

Type

conf

DOI

10.1109/LECHPD.2004.1549673

Filename

1549673