• DocumentCode
    2661773
  • Title

    SiOx/Si Interfacial Si Nano-Pyramids Enhancd Electroluminescence from Si-Rich SiOx MOSLED

  • Author

    Gong-Ru Lin ; Chi-Kuan Lin

  • Author_Institution
    Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei
  • fYear
    2006
  • fDate
    13-15 Sept. 2006
  • Firstpage
    107
  • Lastpage
    109
  • Abstract
    Interfacial (100)-oriented Si nanopyramids are synthesized with surface density of 109 cm-2 prior to the growth of Si-rich SiOx, which greatly suppresses blue-green EL and improve near-infrared EL at 30 nW with lifetime of >10 hrs
  • Keywords
    electroluminescence; elemental semiconductors; interface phenomena; light emitting diodes; nanostructured materials; nanotechnology; semiconductor growth; semiconductor thin films; semiconductor-insulator boundaries; silicon; silicon compounds; 30 nW; MOSLED growth; SiOx-Si; interfacial nanopyramids; near-infrared electroluminescence; surface density; Annealing; Diodes; Electroluminescence; Indium tin oxide; Lattices; Nanocrystals; Plasma temperature; Semiconductor films; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2006. 3rd IEEE International Conference on
  • Conference_Location
    Ottawa, Ont.
  • Print_ISBN
    1-4244-0096-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2006.1708181
  • Filename
    1708181
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2661773