DocumentCode :
2661773
Title :
SiOx/Si Interfacial Si Nano-Pyramids Enhancd Electroluminescence from Si-Rich SiOx MOSLED
Author :
Gong-Ru Lin ; Chi-Kuan Lin
Author_Institution :
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei
fYear :
2006
fDate :
13-15 Sept. 2006
Firstpage :
107
Lastpage :
109
Abstract :
Interfacial (100)-oriented Si nanopyramids are synthesized with surface density of 109 cm-2 prior to the growth of Si-rich SiOx, which greatly suppresses blue-green EL and improve near-infrared EL at 30 nW with lifetime of >10 hrs
Keywords :
electroluminescence; elemental semiconductors; interface phenomena; light emitting diodes; nanostructured materials; nanotechnology; semiconductor growth; semiconductor thin films; semiconductor-insulator boundaries; silicon; silicon compounds; 30 nW; MOSLED growth; SiOx-Si; interfacial nanopyramids; near-infrared electroluminescence; surface density; Annealing; Diodes; Electroluminescence; Indium tin oxide; Lattices; Nanocrystals; Plasma temperature; Semiconductor films; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0096-1
Type :
conf
DOI :
10.1109/GROUP4.2006.1708181
Filename :
1708181
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2661773
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