Title :
A logic-compatible embedded flash memory featuring a multi-story high voltage switch and a selective refresh scheme
Author :
Song, Seung-Hwan ; Chun, Ki Chul ; Kim, Chris H.
Author_Institution :
Dept. of ECE, Univ. of Minnesota, Minneapolis, MN, USA
Abstract :
A logic-compatible embedded flash memory that uses no special devices other than standard core and IO transistors is demonstrated in a low-power standard logic process having a 5nm tunnel oxide. An overstress-free high voltage switch expands the cell VTH window by >;170% while a 5T embedded flash memory cell with a selective row refresh scheme is employed for improved endurance.
Keywords :
flash memories; integrated logic circuits; low-power electronics; switches; 5T embedded flash memory cell; IO transistors; logic-compatible embedded flash memory; low-power standard logic process; multistory high voltage switch; overstress-free high voltage switch; selective row refresh scheme; size 5 nm; tunnel oxide; Computer architecture; Flash memory; Logic gates; Microprocessors; Standards; Switches; Transistors;
Conference_Titel :
VLSI Circuits (VLSIC), 2012 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0848-9
Electronic_ISBN :
978-1-4673-0845-8
DOI :
10.1109/VLSIC.2012.6243824
