• DocumentCode
    2661775
  • Title

    A logic-compatible embedded flash memory featuring a multi-story high voltage switch and a selective refresh scheme

  • Author

    Song, Seung-Hwan ; Chun, Ki Chul ; Kim, Chris H.

  • Author_Institution
    Dept. of ECE, Univ. of Minnesota, Minneapolis, MN, USA
  • fYear
    2012
  • fDate
    13-15 June 2012
  • Firstpage
    130
  • Lastpage
    131
  • Abstract
    A logic-compatible embedded flash memory that uses no special devices other than standard core and IO transistors is demonstrated in a low-power standard logic process having a 5nm tunnel oxide. An overstress-free high voltage switch expands the cell VTH window by >;170% while a 5T embedded flash memory cell with a selective row refresh scheme is employed for improved endurance.
  • Keywords
    flash memories; integrated logic circuits; low-power electronics; switches; 5T embedded flash memory cell; IO transistors; logic-compatible embedded flash memory; low-power standard logic process; multistory high voltage switch; overstress-free high voltage switch; selective row refresh scheme; size 5 nm; tunnel oxide; Computer architecture; Flash memory; Logic gates; Microprocessors; Standards; Switches; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits (VLSIC), 2012 Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4673-0848-9
  • Electronic_ISBN
    978-1-4673-0845-8
  • Type

    conf

  • DOI
    10.1109/VLSIC.2012.6243824
  • Filename
    6243824
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2661775