DocumentCode :
2661779
Title :
Characterization of complex-coupled multi-quantum well DFB laser diode with embedded absorptive Bragg grating layer
Author :
Han, Jae-Ho ; Lhee, Zail ; Park, Sung-Woong
Author_Institution :
Johns Hopkins Univ., Baltimore
fYear :
2007
fDate :
12-14 Dec. 2007
Firstpage :
1
Lastpage :
2
Abstract :
In this work, complex-coupled DFB laser under loss coupling mechanism with multi-quantum well (MQW) structure and absorptive region inserted in the Bragg index grating was fabricated in a simpler process and the effect of quantum well numbers on the optical characteristics (threshold current, quantum efficiency) of laser diode was measured at room and high temperatures for the evaluation.
Keywords :
Bragg gratings; distributed feedback lasers; quantum wells; semiconductor lasers; Bragg index grating; DFB laser diode; absorptive Bragg grating layer; complex-coupled laser; multiquantum well structure; Bragg gratings; Current measurement; Diode lasers; Loss measurement; Optical coupling; Optical losses; Quantum well devices; Quantum well lasers; Temperature; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
Type :
conf
DOI :
10.1109/ISDRS.2007.4422548
Filename :
4422548
Link To Document :
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