DocumentCode
2661779
Title
Characterization of complex-coupled multi-quantum well DFB laser diode with embedded absorptive Bragg grating layer
Author
Han, Jae-Ho ; Lhee, Zail ; Park, Sung-Woong
Author_Institution
Johns Hopkins Univ., Baltimore
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
1
Lastpage
2
Abstract
In this work, complex-coupled DFB laser under loss coupling mechanism with multi-quantum well (MQW) structure and absorptive region inserted in the Bragg index grating was fabricated in a simpler process and the effect of quantum well numbers on the optical characteristics (threshold current, quantum efficiency) of laser diode was measured at room and high temperatures for the evaluation.
Keywords
Bragg gratings; distributed feedback lasers; quantum wells; semiconductor lasers; Bragg index grating; DFB laser diode; absorptive Bragg grating layer; complex-coupled laser; multiquantum well structure; Bragg gratings; Current measurement; Diode lasers; Loss measurement; Optical coupling; Optical losses; Quantum well devices; Quantum well lasers; Temperature; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2007 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-1892-3
Electronic_ISBN
978-1-4244-1892-3
Type
conf
DOI
10.1109/ISDRS.2007.4422548
Filename
4422548
Link To Document