DocumentCode :
2661784
Title :
Sub-ns Dynamics of nc-Si QDs in SiNx Matrix Grown by PECVD
Author :
Jae-Heon Shin ; Cho, K.S. ; Huh, C. ; Kim, K.H. ; Hong, J. ; Sung, G.Y. ; Chang, Y.D. ; Lee, D.H. ; Yong Jai Cho
Author_Institution :
Electron. & Telecommun. Res. Inst., Daejeon
fYear :
2006
fDate :
13-15 Sept. 2006
Firstpage :
110
Lastpage :
112
Abstract :
Time-resolved PL characteristic of the nc-Si QDs in SiNx matrix grown by PECVD is studied. The measured PL lifetime of nc-Si QDs is about 0.43 ns
Keywords :
elemental semiconductors; photoluminescence; plasma CVD; semiconductor growth; semiconductor quantum dots; silicon; silicon compounds; PECVD; PL lifetime; Si; SiNx; nc-Si QD growth; subns QD dynamics; time-resolved PL characteristics; Laser excitation; Nanocrystals; Photonic band gap; Physics; Plasma temperature; Quantum dot lasers; Radiative recombination; Silicon compounds; Telecommunication standards; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0096-1
Type :
conf
DOI :
10.1109/GROUP4.2006.1708182
Filename :
1708182
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2661784
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