Title :
Noise characteristics of 340 nm and 280 in GaN-based light emitting diodes
Author :
Sawyer, Shayla ; Rumyantsev, Sergey L. ; Pala, Nezih ; Shur, Michael S. ; Bilenko, Yuriy ; Gaska, Remis ; Kosterin, Pavel V. ; Salzberg, Brian M.
Author_Institution :
Dept. of Electr., Comput., & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY
Abstract :
Low frequency fluctuations in light intensity of 340 nm and 280 nm GaN-based light emitting diodes (LEDs) are compared with noise properties of other commercially available UV and visible wavelength LEDs and halogen lamps. At low frequencies, LEDs can exhibit lower levels of noise than halogen lamps. An LED noise quality factor beta is estimated for the UV LEDs
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; semiconductor device noise; wide band gap semiconductors; 280 nm; 340 nm; GaN; halogen lamps; light emitting diodes; light intensity; noise characteristics; noise quality factor; ultraviolet LED; visible wavelength LED; Batteries; Fluctuations; Frequency; Light emitting diodes; Light sources; Low-frequency noise; Optical noise; Photodiodes; Proteins; Resistors;
Conference_Titel :
High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on
Conference_Location :
Troy, NY
Print_ISBN :
981-256-196-X
DOI :
10.1109/LECHPD.2004.1549675
