DocumentCode
2661789
Title
Noise characteristics of 340 nm and 280 in GaN-based light emitting diodes
Author
Sawyer, Shayla ; Rumyantsev, Sergey L. ; Pala, Nezih ; Shur, Michael S. ; Bilenko, Yuriy ; Gaska, Remis ; Kosterin, Pavel V. ; Salzberg, Brian M.
Author_Institution
Dept. of Electr., Comput., & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY
fYear
2004
fDate
4-6 Aug. 2004
Firstpage
78
Lastpage
83
Abstract
Low frequency fluctuations in light intensity of 340 nm and 280 nm GaN-based light emitting diodes (LEDs) are compared with noise properties of other commercially available UV and visible wavelength LEDs and halogen lamps. At low frequencies, LEDs can exhibit lower levels of noise than halogen lamps. An LED noise quality factor beta is estimated for the UV LEDs
Keywords
III-V semiconductors; gallium compounds; light emitting diodes; semiconductor device noise; wide band gap semiconductors; 280 nm; 340 nm; GaN; halogen lamps; light emitting diodes; light intensity; noise characteristics; noise quality factor; ultraviolet LED; visible wavelength LED; Batteries; Fluctuations; Frequency; Light emitting diodes; Light sources; Low-frequency noise; Optical noise; Photodiodes; Proteins; Resistors;
fLanguage
English
Publisher
ieee
Conference_Titel
High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on
Conference_Location
Troy, NY
Print_ISBN
981-256-196-X
Type
conf
DOI
10.1109/LECHPD.2004.1549675
Filename
1549675
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