x11 performance increase, x6.9 endurance enhancement, 93% energy reduction of 3D TSV-integrated hybrid ReRAM/MLC NAND SSDs by data fragmentation suppression

A 3D through-silicon-via (TSV) -integrated hybrid ReRAM/multi-level-cell (MLC) NAND solid-state drives´ (SSDs´) architecture is proposed for PC, server and smart phone applications. NAND-like interface (I/F) and sector-access overwrite policy are proposed for the ReRAM. Furthermore, intelligent data management algorithms are proposed. The proposed algorithms suppress data fragmentation and excess usage of the MLC NAND by storing hot data in the ReRAM. As a result, 11 times performance increase, 6.9 times endurance enhancement and 93% write energy reduction are achieved compared with the conventional MLC NAND SSD. Both ReRAM write and read latency should be less than 3μs to obtain these improvements. The required endurance for ReRAM is 10⁵. 3D TSV interconnects reduce the energy consumption by 68%.