• DocumentCode
    2661831
  • Title

    High speed 0.9 μm lateral p-i-n photodetectors fabricated in a standard commercial GaAs VLSI process

  • Author

    Giziewicz, Wojciech P. ; Fonstad, Clifton G., Jr. ; Prasad, Sheila

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA
  • fYear
    2004
  • fDate
    4-6 Aug. 2004
  • Firstpage
    90
  • Lastpage
    95
  • Abstract
    Lateral detectors fabricated in an unmodified commercial GaAs VLSI process are presented. The detectors exhibit previously observed characteristic sensitivity and capacitance properties. High speed measurements indicate a bandwidth in excess of 4 GHz.
  • Keywords
    III-V semiconductors; VLSI; gallium arsenide; integrated optoelectronics; p-i-n photodiodes; photocapacitance; photodetectors; 0.9 micron; GaAs; VLSI process; capacitance properties; high speed measurements; lateral p-i-n photodetectors; Detectors; Gallium arsenide; Implants; MESFET integrated circuits; Ohmic contacts; P-i-n diodes; PIN photodiodes; Parasitic capacitance; Photodetectors; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on
  • Print_ISBN
    981-256-196-X
  • Type

    conf

  • DOI
    10.1109/LECHPD.2004.1549677
  • Filename
    1549677
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2661831