Title :
High speed 0.9 μm lateral p-i-n photodetectors fabricated in a standard commercial GaAs VLSI process
Author :
Giziewicz, Wojciech P. ; Fonstad, Clifton G., Jr. ; Prasad, Sheila
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
Lateral detectors fabricated in an unmodified commercial GaAs VLSI process are presented. The detectors exhibit previously observed characteristic sensitivity and capacitance properties. High speed measurements indicate a bandwidth in excess of 4 GHz.
Keywords :
III-V semiconductors; VLSI; gallium arsenide; integrated optoelectronics; p-i-n photodiodes; photocapacitance; photodetectors; 0.9 micron; GaAs; VLSI process; capacitance properties; high speed measurements; lateral p-i-n photodetectors; Detectors; Gallium arsenide; Implants; MESFET integrated circuits; Ohmic contacts; P-i-n diodes; PIN photodiodes; Parasitic capacitance; Photodetectors; Very large scale integration;
Conference_Titel :
High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
981-256-196-X
DOI :
10.1109/LECHPD.2004.1549677
